SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN ON SI/SIO2 SUBSTRATES

被引：0

作者：

ITSUMI, K ^{[1
]}

KATO, E ^{[1
]}

机构：

[1] WASEDA UNIV,DEPT MAT SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C477 / C477

页数：1

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