APPLICATIONS OF RHEED TO THE STUDY OF GROWTH DYNAMICS AND SURFACE-CHEMISTRY DURING MBE

被引：7

作者：

JOYCE, BA ^{[1
]}

OHTANI, N ^{[1
]}

MOKLER, SM ^{[1
]}

SHITARA, T ^{[1
]}

ZHANG, J ^{[1
]}

NEAVE, JH ^{[1
]}

FAWCETT, PN ^{[1
]}

机构：

[1] NIPPON STEEL CORP LTD,ELECTR RES LABS,ADV SEMICOND TECHNOL LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

SURFACE SCIENCE | 1993年 / 298卷 / 2-3期

关键词：

D O I：

10.1016/0039-6028(93)90054-N

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We discuss three applications of RHEED to the study of semiconductor film growth by MBE. In the first we discuss the extension of the vicinal plane method to the in-situ measurement of step propagation rates and show how they vary with growth parameters. The second concerns some apparent anomalies in the RHEED response to the growth of GaAs on GaAs(110) surfaces. Finally we consider surface chemical processes (reaction and segregation) in the growth of Si and SiGe alloys from molecular beams of Si2H6 and GeH4. We demonstrate that the in-situ measurement of the growth rate on a monolayer-by-monolayer basis can provide quite detailed chemical information.

引用

页码：399 / 407

页数：9

共 50 条

[21] Influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface
Russian Acad of Sciences, Novosibirsk, Russia
Thin Solid Films, 1-2 (183-187):
[22] The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface
Nikiforov, AI
Markov, VA
Cherepanov, VA
Pchelyakov, OP
THIN SOLID FILMS, 1998, 336 (1-2) : 183 - 187
[23] RHEED INTENSITY OSCILLATIONS OBSERVED DURING THE MBE GROWTH OF INSB(100)
DROOPAD, R
WILLIAMS, RL
PARKER, SD
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (02) : 111 - 113
[24] SURFACE-CHEMISTRY STUDY OF NONIMPACT INKS
WINSJANSEN, E
POTTER, WT
TEETERS, D
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1994, 207 : 228 - CHED
[25] The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface
Nikiforov, AI
Markov, VA
Cherepanov, VA
Pchelyakov, OP
THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 : 183 - 187
[26] A RHEED STUDY OF THE SURFACE RECONSTRUCTIONS OF SI(001) DURING GAS SOURCE MBE USING DISILANE
LIU, WK
MOKLER, SM
OHTANI, N
ROBERTS, C
JOYCE, BA
SURFACE SCIENCE, 1992, 264 (03) : 301 - 311
[27] Phase-locked substrate rotation:: new applications for RHEED in MBE growth
Braun, W
Möller, H
Zhang, YH
JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 50 - 55
[28] SURFACE-CHEMISTRY EVOLUTION DURING MOLECULAR-BEAM EPITAXY GROWTH OF INGAAS
EVANS, KR
KASPI, R
EHRET, JE
SKOWRONSKI, M
JONES, CR
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04): : 1820 - 1823
[29] THE FRONTIERS OF SURFACE-CHEMISTRY AND ITS APPLICATIONS - THE BERKELEY VIEW
SOMORJAI, GA
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1992, 203 : 182 - COLL
[30] PHOTOCARRIER-INDUCED SURFACE-CHEMISTRY - FUNDAMENTALS AND APPLICATIONS
OSGOOD, RM
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1987, 193 : 5 - ACSC

← 1 2 3 4 5 →