SPATIAL MODULATION OF THE FERMI LEVEL BY COHERENT ILLUMINATION OF UNDOPED GAAS

被引:20
|
作者
NOLTE, DD [1 ]
OLSON, DH [1 ]
GLASS, AM [1 ]
机构
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
来源
PHYSICAL REVIEW B | 1989年 / 40卷 / 15期
关键词
D O I
10.1103/PhysRevB.40.10650
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:10650 / 10652
页数:3
相关论文
共 50 条
  • [31] INSITU MEASUREMENTS OF THE FERMI LEVEL POSITION IN UNDOPED AND DOPED A-SI-H FILMS
    SIEFERT, JM
    DEROSNY, G
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 531 - 534
  • [32] SULFIDE PASSIVATION OF THE GAAS SURFACE - UNPINNING OF THE FERMI-LEVEL
    BEDNYI, BI
    BAIDUS, NV
    SEMICONDUCTORS, 1995, 29 (08) : 776 - 778
  • [33] PHOTOELLIPSOMETRY DETERMINATION OF SURFACE FERMI-LEVEL IN GAAS (100)
    XIONG, YM
    SNYDER, PG
    WOOLLAM, JA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04): : 1075 - 1082
  • [34] Origin of Fermi-level pinning at GaAs surfaces and interfaces
    Colleoni, Davide
    Miceli, Giacomo
    Pasquarello, Alfredo
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2014, 26 (49)
  • [35] Restricted motion of a GaAs surface Fermi level caused by excess As
    Wada, Yoshinori
    Wada, Kazumi
    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1995, 13 (05): : 2069 - 2074
  • [36] PINNING AND FERMI LEVEL MOVEMENT AT GAAS-SURFACES AND INTERFACES
    SPICER, WE
    NEWMAN, N
    SPINDT, CJ
    LILIENTALWEBER, Z
    WEBER, ER
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03): : 2084 - 2089
  • [37] FERMI LEVEL EFFECT ON COMPOSITIONAL DISORDERING OF ALAS/GAAS SUPERLATTICE
    OGAWA, K
    KAWABE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (07): : 1240 - 1242
  • [38] FERMI LEVEL PINNING AT EPITAXIAL SI ON GAAS(100) INTERFACES
    SILBERMAN, JA
    DELYON, TJ
    WOODALL, JM
    APPLIED PHYSICS LETTERS, 1991, 59 (25) : 3300 - 3302
  • [39] ON THE FERMI LEVEL PINNING AT Ge/GaAs(110) INTERFACE.
    Xu Zhizhong
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1988, 9 (01): : 82 - 85
  • [40] OXIDATION OF GAAS(110) CLEAN SURFACE AND FIXING THE FERMI LEVEL
    BERKOVITS, VL
    KISELEV, VA
    MINASHVILI, TA
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1987, 13 (13): : 800 - 804