FORMATION OF SILICON-NITRIDE COMPOUND LAYERS BY HIGH-DOSE NITROGEN IMPLANTATION

被引：0
|
作者：
TSUJIDE, T [1 ]
NOJIRI, M [1 ]
KITAGAWA, H [1 ]
机构：
[1] NIPPON ELECT CO LTD,DIV IC,KAWASAKI 211,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C227 / C227
页数：1
相关论文
共 50 条
  • [31] OXIDATION OF AMORPHOUS LAYERS OF SILICON-NITRIDE
    KHRAMOVA, LV
    SMIRNOVA, TP
    AYUPOV, BM
    BELYI, VI
    INORGANIC MATERIALS, 1980, 16 (08) : 973 - 978
  • [32] PROPERTIES INVESTIGATION OF THIN SILICON-NITRIDE LAYERS SYNTHESIZED BY ION-IMPLANTATION
    KOMAROV, FF
    ROGALEVICH, IA
    TISHKOV, VS
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 39 (3-4): : 163 - 167
  • [33] HIGH-TEMPERATURE THERMODYNAMICS OF THE SILICON, NITROGEN, SILICON-NITRIDE SYSTEM
    PEHLKE, RD
    ELLIOTT, JF
    TRANSACTIONS OF THE AMERICAN INSTITUTE OF MINING AND METALLURGICAL ENGINEERS, 1959, 215 (05): : 781 - 785
  • [34] HIGH-DOSE, LOW-ENERGY IMPLANTATION OF NITROGEN IN SILICON, NIOBIUM AND ALUMINUM
    FUSSER, HJ
    OECHSNER, H
    SURFACE & COATINGS TECHNOLOGY, 1991, 48 (02): : 97 - 102
  • [35] EBIC STUDY OF SILICON ON INSULATOR STRUCTURES FORMED BY HIGH-DOSE NITROGEN IMPLANTATION
    KWOR, R
    MATSON, RJ
    ALJASSIM, MM
    POLCHLOPEK, S
    HEMMENT, PLF
    REESON, KJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (03) : 876 - 878
  • [36] FORMATION OF SILICON-NITRIDE LAYERS ON CRYSTALLINE SILICON BY ION-IMPLANTATION AS REVEALED BY INTERNAL-FRICTION AND INFRARED TRANSMISSION MEASUREMENTS
    OGALE, AS
    BHORASKAR, VN
    GHAISAS, SV
    GODBOLE, VP
    OGALE, SB
    RAYE, BS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 398 - 400
  • [37] CREATION OF SILICON-NITRIDE FILMS ON SILICON DURING IMPLANTATION
    ALEKSANDROV, PA
    BARANOVA, EK
    BUDARAGIN, VV
    DEMAKOV, KD
    KOTOV, EV
    SHEMARDOV, SG
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1991, 34 (04) : 972 - 973
  • [38] FORMATION OF BURIED IRON-COBALT-SILICIDE LAYERS BY HIGH-DOSE IMPLANTATION
    PANKNIN, D
    WIESER, E
    SKORUPA, W
    VOHSE, H
    ALBRECHT, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (1-2): : 213 - 217
  • [39] Amorphous structures of silicon carbonitride formed by high-dose nitrogen ion implantation into silicon carbide
    Ishimaru, M
    Naito, M
    Hirotsu, Y
    Sickafus, KE
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 206 : 994 - 998
  • [40] A NOVEL ETCH STOP SYSTEM BASED ON HIGH-DOSE NITROGEN IMPLANTATION FOR THIN CRYSTALLINE SILICON LAYER FORMATION
    SCHMIDT, B
    KREISSIG, U
    MUNZER, H
    ROST, E
    EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 170 - 172
12345