MAGNETIC-FIELD STUDIES OF NEGATIVE DIFFERENTIAL CONDUCTIVITY IN DOUBLE BARRIER RESONANT TUNNELLING STRUCTURES BASED ON N-INP/(INGA)AS

被引：67

作者：

LEADBEATER, ML ^{[1
]}

EAVES, L ^{[1
]}

SIMMONDS, PE ^{[1
]}

TOOMBS, GA ^{[1
]}

SHEARD, FW ^{[1
]}

CLAXTON, PA ^{[1
]}

HILL, G ^{[1
]}

PATE, MA ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 3-4期

关键词：

This work is supported by SERC;

D O I：

10.1016/0038-1101(88)90372-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：707 / 710

页数：4

共 47 条

[41] OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE IN AL0.2GA0.8AS/AL0.4GA0.6AS/GAAS DOUBLE BARRIER RESONANT TUNNELLING STRUCTURE
YANG, CH
SHIH, HD
ELECTRONICS LETTERS, 1988, 24 (25) : 1554 - 1555
[42] SELF-CONSISTENT CALCULATION OF TRAVERSAL TIME IN A DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE IN THE PRESENCE OF A TRANSVERSE MAGNETIC-FIELD
ANWAR, AFM
JAHAN, MM
PHYSICAL REVIEW B, 1994, 49 (24): : 17440 - 17443
[43] Optically controlled S- and N-shaped negative differential resistances by resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS)
Sakata, H
Utaka, K
Matsushima, Y
OPTICAL AND QUANTUM ELECTRONICS, 1996, 28 (05) : 591 - 597
[44] EFFECTS OF A MAGNETIC FIELD ON DOUBLE-INJECTION NEGATIVE RESISTANCE IN LONG P+-PI-N+ STRUCTURES
OTANI, Y
MATSUBARA, K
NISHIDA, Y
JOURNAL OF APPLIED PHYSICS, 1970, 41 (11) : 4711 - +
[45] INVESTIGATION OF RESONANT TUNNELING FROM MINIBAND EMITTER STATES IN DOUBLE BARRIER STRUCTURES BASED ON (ALGA)AS GAAS USING HIGH MAGNETIC-FIELDS
PRITCHARD, RE
HARNESS, PC
CURY, L
PORTAL, JC
KHAMSEHPOUR, B
TRUSCOTT, WS
SINGER, KE
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (07) : 626 - 630
[46] THE EFFECT OF THE X-CONDUCTION BAND MINIMA ON RESONANT TUNNELING AND CHARGE BUILDUP IN DOUBLE BARRIER STRUCTURES BASED ON N-GAAS/(ALGA)AS
FOSTER, TJ
LEADBEATER, ML
MAUDE, DK
ALVES, ES
EAVES, L
HENINI, M
HUGHES, OH
CELESTE, A
PORTAL, JC
LANCEFIELD, D
ADAMS, AR
SOLID-STATE ELECTRONICS, 1989, 32 (12) : 1731 - 1735
[47] Room temperature negative differential resistance of CdF2/CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates
Kanazawa, Tohru
Fujii, Ryo
Wada, Takafumi
Suzuki, Yusuke
Watanabe, Masahiro
Asada, Masahiro
APPLIED PHYSICS LETTERS, 2007, 90 (09)

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