SURFACE PHOSPHIDATION OF GAAS BY THE LASER-INDUCED DISSOCIATION OF TRIMETHYLPHOSPHINE

被引：0
|
作者：
DAVIDSON, JL [1 ]
JOHN, P [1 ]
ROBERTS, PG [1 ]
JUBBER, MG [1 ]
WILSON, JIB [1 ]
机构：
[1] HERIOT WATT UNIV,DEPT PHYS,EDINBURGH EH14 4AS,MIDLOTHIAN,SCOTLAND
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 11期
关键词：
D O I：
10.1063/1.112063
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The localized phosphidation of single-crystal GaAs, by the frequency doubled argon ion laser photolysis at 257 nm Of P(CH3)3, is reported. Tracks were deposited by scanning the focused laser beam at a speed of 34.6 mum s-1 and were characterized by scanning electron microscopy and laser ionization mass analysis. Evidence is presented which suggests that a photochemical reaction is initiated by band gap absorption by GaAs.
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收藏
页码：1397 / 1399
页数：3
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