THEORETICAL THRESHOLD LOWERING OF COMPRESSIVELY STRAINED INGAAS/INGAASP AND GAINASP/GAINASP QUANTUM-WELL LASERS

被引：3

作者：

BARRAU, J ^{[1
]}

BROUSSEAU, B ^{[1
]}

CALVAS, B ^{[1
]}

EMERY, JY ^{[1
]}

SIMES, RJ ^{[1
]}

STARCK, C ^{[1
]}

GOLDSTEIN, L ^{[1
]}

机构：

[1] ALCATEL ALSTHOM RECH,F-91460 MARCOUSSIS,FRANCE

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 06期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first theoretical evaluation is reported of the effect of biaxial compression on the quantum-well GaxIn1-xAs/Ga0.20InAs0.45P and Ga0.20In0.80AsyP1-y/Ga0.20In0.80As0.45P0.55 laser threshold current density. Reference is made to known experimental results, and a comparison carried out of the potentialities of the two types of laser.

引用

页码：551 / 553

页数：3

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