THEORETICAL THRESHOLD LOWERING OF COMPRESSIVELY STRAINED INGAAS/INGAASP AND GAINASP/GAINASP QUANTUM-WELL LASERS

被引：3
|
作者：
BARRAU, J [1 ]
BROUSSEAU, B [1 ]
CALVAS, B [1 ]
EMERY, JY [1 ]
SIMES, RJ [1 ]
STARCK, C [1 ]
GOLDSTEIN, L [1 ]
机构：
[1] ALCATEL ALSTHOM RECH,F-91460 MARCOUSSIS,FRANCE
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 06期
关键词：
SEMICONDUCTOR LASERS; LASERS;
D O I：
10.1049/el:19920348
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first theoretical evaluation is reported of the effect of biaxial compression on the quantum-well GaxIn1-xAs/Ga0.20InAs0.45P and Ga0.20In0.80AsyP1-y/Ga0.20In0.80As0.45P0.55 laser threshold current density. Reference is made to known experimental results, and a comparison carried out of the potentialities of the two types of laser.
引用
收藏
页码：551 / 553
页数：3
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