BELOW BAND-GAP ELECTROABSORPTION IN BULK SEMIINSULATING GAAS

被引：10
|
作者：
ADAMS, JC
CAPPS, CD
FALK, RA
FERRIER, SG
机构：
[1] Boeing Defense and Space Group, Box 3999, Seattle, WA 98124
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 05期
关键词：
D O I：
10.1063/1.109973
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electroabsorption measurements of bulk semi-insulating GaAs using a pulsed applied voltage are presented for the wavelength range 890-920 nm and compared with results of the same measurement using a dc applied voltage. In the latter case, field inhomogeneities in the GaAs gives a spatially dependent absorption which thwarts extraction of the absorption coefficient versus electric field. We circumvent this problem by transiently measuring the absorption during a pulsed bias voltage when the field in the sample is nearly uniform.
引用
收藏
页码：633 / 635
页数：3
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