FERROELECTRIC THIN-FILMS FOR MEMORY APPLICATIONS - SOL-GEL PROCESSING AND DECOMPOSITION OF ORGANOMETALLIC COMPOUNDS

被引：18
|
作者：
KLEE, M [1 ]
LARSEN, PK [1 ]
机构：
[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
来源：
FERROELECTRICS | 1992年 / 133卷 / 1-4期
关键词：
D O I：
10.1080/00150199208217981
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pb(ZrxTi1-x)O3 (PZT), Bi4Ti3O12 and BaTiO3 films as well as SrTiO3 films are considered for nonvolatile memory applications and high density dynamic random access memories. These perovskite systems are frequently deposited by a sol-gel or MOD technique. Processing and the properties of the thin films are summarized.
引用
收藏
页码：91 / 96
页数：6
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