HIGH-FREQUENCY HIGH-POWER STATIC INDUCTION TRANSISTOR

被引：57
|
作者：
NISHIZAWA, JI [1 ]
YAMAMOTO, K [1 ]
机构：
[1] SEMICONDUCTOR RES FDN,SENDAI,JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 03期
关键词：
D O I：
10.1109/T-ED.1978.19076
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：314 / 322
页数：9
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