TIME RESOLVED STUDY OF NON-RADIATIVE RECOMBINATION IN GAAS GAALAS HETEROSTRUCTURES

被引：0
|
作者：
PEREIRA, MF
SERMAGE, B
ALEXANDRE, F
BEERENS, J
AZOULAY, R
LOUIS, AMJ
机构：
来源：
JOURNAL DE PHYSIQUE | 1987年 / 48卷 / C-7期
关键词：
D O I：
10.1051/jphyscol:1987799
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：413 / 415
页数：3
相关论文
共 50 条
  • [21] Non-radiative recombination process in BGaAs/GaAs alloys: Two layer photothermal deflection model
    Ilahi, S.
    Baira, M.
    Saidi, F.
    Yacoubi, N.
    Auvray, L.
    Maaref, H.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 581 : 358 - 362
  • [22] Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires
    Chen, Shula L.
    Chen, Weimin M.
    Ishikawa, Fumitaro
    Buyanova, Irina A.
    SCIENTIFIC REPORTS, 2015, 5
  • [23] Radiative and non-radiative exciton recombination rate constants in ZnSe clusters
    Du, Ning
    Yu, Shengping
    Xie, Yujuan
    Cui, Yingqi
    Zhang, Li
    Yang, Mingli
    EUROPEAN PHYSICAL JOURNAL B, 2019, 92 (12):
  • [24] Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires
    Shula L. Chen
    Weimin M. Chen
    Fumitaro Ishikawa
    Irina A. Buyanova
    Scientific Reports, 5
  • [25] Structures responsible for radiative and non-radiative recombination activity of dislocations in silicon
    Mchedlidze, Teimuraz
    Arguirov, Tzanimir
    Kononchuk, Oleg
    Trushin, Maxim
    Kittler, Martin
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3, 2011, 8 (03): : 991 - 995
  • [26] Radiative and non-radiative exciton recombination rate constants in ZnSe clusters
    Ning Du
    Shengping Yu
    Yujuan Xie
    Yingqi Cui
    Li Zhang
    Mingli Yang
    The European Physical Journal B, 2019, 92
  • [27] Conical intersections and non-radiative recombination in semiconductor nanocrystals
    Levine, Benjamin
    Shu, Yinan
    Fales, Bryan
    Peng, Wei-Tao
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2017, 253
  • [28] NON-RADIATIVE RECOMBINATION AT VALENCE-ALTERNATION PAIRS
    KASTNER, M
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (17): : 3319 - 3327
  • [29] STUDY OF THE ENERGY RELAXATION TIME OF HOT ELECTRONS IN GaAs/GaAlAs HETEROSTRUCTURES.
    Vass, Erich
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1985, 134 B-C (1-3): : 337 - 341
  • [30] Non-radiative distant pair recombination in amorphous silicon
    Stachowitz, R
    Schubert, M
    Fuhs, W
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 190 - 196
12345