EVALUATION OF CHANNEL HOT CARRIER EFFECTS IN N-MOS TRANSISTORS AT 77-K WITH THE CHARGE PUMPING TECHNIQUE

被引：4
|
作者：
HEREMANS, P [1 ]
SUN, YC [1 ]
GROESENEKEN, G [1 ]
MAES, HE [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(87)90107-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：313 / 318
页数：6
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