EVALUATION OF CHANNEL HOT CARRIER EFFECTS IN N-MOS TRANSISTORS AT 77-K WITH THE CHARGE PUMPING TECHNIQUE

被引：4

作者：

HEREMANS, P ^{[1
]}

SUN, YC ^{[1
]}

GROESENEKEN, G ^{[1
]}

MAES, HE ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(87)90107-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：313 / 318

页数：6

共 39 条

[1] ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS-TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE
BELLENS, R
HEREMANS, P
GROESENEKEN, G
MAES, HE
JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 651 - 655
[2] EVALUATION OF HOT CARRIER DEGRADATION OF N-CHANNEL MOSFETS WITH THE CHARGE PUMPING TECHNIQUE
HEREMANS, P
MAES, HE
SAKS, N
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 428 - 430
[3] Relaxable damage in hot-carrier stressing of n-MOS transistors
Rahmoun, M., 2000, Gordon & Breach Science Publ Inc, Newark, NJ, United States (22)
[4] DOUBLE-CHANNEL HOT-CARRIER INJECTION EFFECTS IN NMOSFETS AT 77-K
LIU, WD
WEI, TL
ZHENG, J
INTERNATIONAL JOURNAL OF ELECTRONICS, 1994, 77 (06) : 887 - 897
[5] Examination of the time power law dependencies in hot carrier stressing of n-MOS transistors
Doyle, BS
Mistry, KR
Faricelli, J
IEEE ELECTRON DEVICE LETTERS, 1997, 18 (02) : 51 - 53
[6] STRONG CARRIER FREEZEOUT ABOVE 77-K IN TELLURIUM-DOPED BURIED-CHANNEL MOS-TRANSISTORS
TEWKSBURY, SK
BIAZZO, MR
LINDSTROM, TL
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) : 67 - 69
[7] A new approach of hot-carrier degradation and lifetime prediction for N-MOS transistors
Kacar, Firat
Kuntman, Ayten
Kuntman, Hakan
CIRCUITS AND SYSTEMS FOR SIGNAL PROCESSING , INFORMATION AND COMMUNICATION TECHNOLOGIES, AND POWER SOURCES AND SYSTEMS, VOL 1 AND 2, PROCEEDINGS, 2006, : 129 - 132
[8] N-TYPE SILICON AT 77-K - HOT CARRIER NOISE AND NOT GENERATION RECOMBINATION NOISE
NOUGIER, JP
GASQUET, D
VAISSIERE, JC
REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 715 - 717
[9] UNDERSTANDING OF THE TEMPERATURE-DEPENDENCE OF CHANNEL HOT-CARRIER DEGRADATION IN THE RANGE 77-K TO 300-K
HEREMANS, P
VANDENBOSCH, G
BELLENS, R
GROESENEKEN, G
MAES, HE
1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1989, : 67 - 70
[10] CHARACTERIZATION OF OXIDE TRAP AND INTERFACE TRAP CREATION DURING HOT-CARRIER STRESSING OF N-MOS TRANSISTORS USING THE FLOATING-GATE TECHNIQUE
DOYLE, BS
FARICELLI, J
MISTRY, KR
VUILLAUME, D
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (02) : 63 - 65

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