DARK INJECTION OF ELECTRONS AND HOLES AND RADIATIVE RECOMBINATION IN ANTHRACENE WITH METALLIC CONTACTS

被引:22
|
作者
MEHL, W
FUNK, B
机构
关键词
D O I
10.1016/0375-9601(67)90700-1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:364 / &
相关论文
共 50 条
  • [41] DRIFT MOBILITY OF HOLES AND ELECTRONS IN PERDEUTERATED ANTHRACENE SINGLE-CRYSTALS
    MEY, W
    SONNONST.TJ
    MOREL, DL
    HERMANN, AM
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 468 - 468
  • [42] FIELD DEPENDENT LOSSES OF ELECTRONS AND HOLES BY BIOMOLECULAR VOLUME RECOMBINATION IN EXCITATION LAYER OF ANTHRACENE SINGLE CRYSTALS STUDIED BY DRIFT CURRENT PULSES
    KARL, N
    SOMMER, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 6 (01): : 231 - &
  • [43] STATISTICS OF INTER-IMPURITY RECOMBINATION OF ELECTRONS AND HOLES IN SEMICONDUCTORS
    KARAGEOG.PM
    LEIDERMA.AY
    PHYSICA STATUS SOLIDI, 1968, 26 (02): : 419 - &
  • [44] EFFECT OF NICKEL AND COPPER IMPURITIES ON THE RECOMBINATION OF HOLES AND ELECTRONS IN GERMANIUM
    BURTON, JA
    HULL, GW
    MORIN, FJ
    SEVERIENS, JC
    JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08): : 853 - 859
  • [45] NEW RADIATION RESULTING FROM RECOMBINATION OF HOLES AND ELECTRONS IN GERMANIUM
    HAYNES, JR
    PHYSICAL REVIEW, 1955, 98 (06): : 1866 - 1868
  • [46] CONTRIBUTION TO THE STATISTICS OF RECOMBINATION OF ELECTRONS AND HOLES IN IMPURITY CENTERS IN SEMICONDUCTORS
    GULYAEV, YV
    SOVIET PHYSICS-SOLID STATE, 1961, 3 (02): : 279 - 280
  • [47] RECOMBINATION OF ELECTRONS AND HOLES WHEN VARIOUS TYPES OF TRAPS ARE PRESENT
    KALASHNIKOV, SG
    SOVIET PHYSICS-TECHNICAL PHYSICS, 1956, 1 (02): : 237 - 247
  • [48] Recombination of drifting holes with trapped electrons in stabilized a-Se photoconductors:: Langevin recombination
    Kasap, SO
    Fogal, B
    Kabir, MZ
    Johanson, RE
    O'Leary, SK
    APPLIED PHYSICS LETTERS, 2004, 84 (11) : 1991 - 1993
  • [49] ON THE RECOMBINATION OF ELECTRONS AND HOLES AT TRAPS WITH FINITE RELAXATION-TIME
    DHARIWAL, SR
    KOTHARI, LS
    JAIN, SC
    SOLID-STATE ELECTRONICS, 1981, 24 (08) : 749 - 752
  • [50] Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
    Sumin Choi
    David J. Rogers
    Eric V. Sandana
    Philippe Bove
    Ferechteh H. Teherani
    Christian Nenstiel
    Axel Hoffmann
    Ryan McClintock
    Manijeh Razeghi
    David Look
    Angus Gentle
    Matthew R. Phillips
    Cuong Ton-That
    Scientific Reports, 7