SI INVERSION-LAYERS WITH A SIXFOLD VALLEY DEGENERACY

被引：5
|
作者：
TSUI, DC
KAMINSKY, G
机构：
来源：
SURFACE SCIENCE | 1980年 / 98卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(80)90520-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：400 / 406
页数：7
相关论文
共 50 条
  • [31] VALLEY SPLITTING IN SI(100) N-CHANNEL INVERSION-LAYERS DETERMINED BY A TILTED FIELD METHOD
    WAKABAYASHI, J
    KIMURA, S
    KAWAJI, S
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1985, 54 (10) : 3885 - 3888
  • [32] INVERSION-LAYERS ON INP
    MEINERS, LG
    LILE, DL
    COLLINS, DA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1458 - 1461
  • [33] EFFECT OF REVERSE SUBSTRATE BIAS ON THE MINIGAP IN SI INVERSION-LAYERS
    COLE, T
    LAKHANI, AA
    STILES, PJ
    SOLID STATE COMMUNICATIONS, 1981, 39 (01) : 127 - 132
  • [34] ELECTRON MAGNETOTRANSPORT IN UNIAXIALLY STRESSED SI(100) INVERSION-LAYERS
    PAQUIN, N
    PEPPER, M
    GUNDLACH, A
    RUTHVEN, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (09) : 828 - 830
  • [35] PIEZORESISTANCE IN NORMAL-CHANNEL INVERSION-LAYERS OF SI MOSFETS
    ZAIMA, S
    MARUYAMA, T
    YASUDA, Y
    APPLIED SURFACE SCIENCE, 1989, 41-2 : 433 - 438
  • [36] NEGATIVE MAGNETORESISTANCE IN UNIAXIALLY STRESSED SI(100) INVERSION-LAYERS
    PAQUIN, N
    PEPPER, M
    GUNDLACH, A
    RUTHVEN, A
    PHYSICAL REVIEW B, 1988, 38 (02): : 1593 - 1596
  • [37] THE COMPLEX CAPACITANCE OF SI INVERSION-LAYERS IN THE QUANTIZED RESISTANCE REGIME
    ZHAO, LC
    GOLDBERG, BB
    SYPHERS, DA
    STILES, PJ
    SURFACE SCIENCE, 1984, 142 (1-3) : 332 - 338
  • [38] NEGATIVE MAGNETORESISTANCE IN ANDERSON LOCALIZATION OF SI MOS INVERSION-LAYERS
    KAWAGUCHI, Y
    KAWAJI, S
    SURFACE SCIENCE, 1982, 113 (1-3) : 505 - 509
  • [39] ANISOTROPY OF 2D PLASMONS IN INVERSION-LAYERS ON SI
    BATKE, E
    HEITMANN, D
    KOTTHAUS, JP
    SURFACE SCIENCE, 1982, 113 (1-3) : 367 - 370
  • [40] AN EXPLANATION FOR THE OBSERVED QUANTIZATION OF HALL RESISTANCE IN SI INVERSION-LAYERS
    TSUI, DC
    ALLEN, SJ
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (01): : 19 - 19
12345