MONOLAYER ABRUPTNESS IN HIGHLY STRAINED INASXP1-X/INP QUANTUM WELL INTERFACES

被引：28
|
作者：
SCHNEIDER, RP [1 ]
WESSELS, BW [1 ]
机构：
[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 12期
关键词：
D O I：
10.1063/1.100742
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1142 / 1144
页数：3
相关论文
共 50 条
  • [41] Band alignment and quantum states of InAsxP1-x/InP surface quantum wells investigated from ultraviolet photoelectron spectroscopy and photoluminescence
    Dixit, V. K.
    Kumar, Shailendra
    Singh, S. D.
    Porwal, S.
    Sharma, T. K.
    Oak, S. M.
    MATERIALS LETTERS, 2012, 87 : 69 - 72
  • [42] Terahertz emission mechanisms in InAsxP1-x
    Lockhart, Patric
    Dutta, P. S.
    Han, Pengyu
    Zhang, X. -C.
    APPLIED PHYSICS LETTERS, 2008, 92 (01)
  • [43] ION-IMPLANTATION IN INASXP1-X
    DAVIES, DE
    HAWLEY, JJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1066 - 1066
  • [44] THERMAL-OXIDATION OF INASXP1-X
    SCHWARTZ, GP
    THIEL, FA
    GUALTIERI, GJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03): : 1252 - 1256
  • [45] EPITAXIAL-GROWTH OF INP ON SI BY OMVPE DEFECT REDUCTION IN EPITAXIAL INP USING INASXP1-X/INP SUPERLATTICES
    SEKI, A
    KONUSHI, F
    KUDO, J
    KOBA, M
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 527 - 531
  • [46] Self-annihilation of electron-irradiation-induced defects in InAsxP1-x/InP multiquantum well solar cells
    Khan, Aurangzeb
    Freundlich, A.
    Gou, Jihua
    Gapud, A.
    Imazumi, M.
    Yamaguchi, M.
    APPLIED PHYSICS LETTERS, 2007, 90 (23)
  • [47] ELECTRICAL FIELD DEPENDENCE OF EMISSION RATE OF DEEP LEVELS IN InAsxP1-x/InP MULTIQUANTUM WELL SOLAR CELL STRUCTURE
    Khan, A.
    Freundlich, A.
    Gou, J.
    Alsharif, S.
    Gapud, A.
    Imaizumi, M.
    Yamaguchi, M.
    2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3, 2009, : 1557 - +
  • [48] Pressure-induced resonance Raman effect of InAsxP1-x alloy films on InP
    Byun, Jun Seok
    Kim, Young Dong
    Park, Ta-Ryeong
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 61 (10) : 1573 - 1577
  • [49] HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF INASXP1-X/INP HETEROSTRUCTURES
    LI, DX
    SCHNEIDER, RP
    WESSELS, BW
    CHIOU, WA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C378 - C378
  • [50] Engineering InAsxP1-x/InP/ZnSe III-V alloyed core/shell quantum dots for the near infrared
    Kim, Sang-Wook
    Zimmer, John P.
    Ohnishi, Shunsuke
    Tracy, Joseph B.
    Frangioni, John V.
    Bawendi, Moungi G.
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2006, 231
12345