GALLIUM-ARSENIDE PASSIVATION THROUGH NITRIDATION WITH HYDRAZINE

被引：24

作者：

VOGT, KW ^{[1
]}

KOHL, PA ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,SCH CHEM ENGN,ATLANTA,GA 30332

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 10期

关键词：

D O I：

10.1063/1.355130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Passivating films were grown on gallium arsenide by direct nitridation with hydrazine at 300-400-degrees-C. Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis show that the films are primarily gallium nitride with an oxide impurity. The oxide content is a function of the surface pretreatment, reaction temperature, and water concentration in the hydrazine. Improvements in the band gap photoluminescence with nitridation indicate a lower surface state density and reflect an improvement in the termination of the semiconductor lattice.

引用

页码：6448 / 6450

页数：3

共 50 条

[31] GALLIUM-ARSENIDE CHIPS IN
MARTIN, D
CHEMISTRY IN BRITAIN, 1992, 28 (03) : 211 - 212
[32] GALLIUM-ARSENIDE ON SILICON
SHICHIJO, H
ELECTRONICS & WIRELESS WORLD, 1988, 94 (1628): : 609 - 609
[33] A STUDY OF GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING PARAMETERS
SCHERER, A
BEEBE, E
CRAIGHEAD, HG
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1604 - 1605
[34] INVESTIGATION OF ALUMINUM GALLIUM-ARSENIDE GALLIUM-ARSENIDE SUPERLATTICES BY ATOMIC FORCE MICROSCOPY
FRIEDBACHER, G
HANSMA, PK
SCHWARZBACH, D
GRASSERBAUER, M
NICKEL, H
ANALYTICAL CHEMISTRY, 1992, 64 (17) : 1760 - 1762
[35] MOBILITY DEGRADATION AND TRANSFERRED ELECTRON EFFECT IN GALLIUM-ARSENIDE AND INDIUM GALLIUM-ARSENIDE
ARORA, VK
MUI, DSL
MORKOC, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) : 1231 - 1238
[36] COULOMETRIC TITRATION OF GALLIUM IN GALLIUM-ARSENIDE
NAKAYAMA, S
MIZUSUNA, H
HARADA, S
BUNSEKI KAGAKU, 1990, 39 (05) : 307 - 311
[37] Thermal and chemical passivation of gallium-arsenide films deposited from ablation plasma
Kabyshev A.V.
Konusov F.V.
Remnev G.E.
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2014, 8 (1) : 158 - 163
[38] PROBLEM OF THE MECHANISM OF PASSIVATION OF SHALLOW DONORS IN GALLIUM-ARSENIDE BY ATOMIC-HYDROGEN
OMELYANOVSKII, EM
PAKHOMOV, AV
POLYAKOV, AY
BORODINA, OM
NALIVAIKO, II
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (12): : 1399 - 1399
[39] GALLIUM ALUMINUM ARSENIDE GALLIUM-ARSENIDE INTEGRATED OPTICAL REPEATER
BARCHAIM, N
LAU, KY
URY, I
YARIV, A
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 466 : 65 - 68
[40] SELENIDE LAYERS ON GALLIUM-ARSENIDE (100) - CHEMICAL-REACTIONS AND ELECTRONIC PASSIVATION
CAIRNS, J
CAFOLLA, AA
HUGHES, A
NOWAK, C
WILLIAMS, RH
CATALYSIS TODAY, 1992, 12 (04) : 385 - 392

← 1 2 3 4 5 →