LOW-TEMPERATURE EQUILIBRIA OF POINT-DEFECTS INDUCED BY CONVENTIONAL AND RAPID THERMAL ANNEALING IN CZ SILICON

被引：0

|

作者：

SUSI, E

LULLI, G

POGGI, A

SOUREK, Z

机构：

[1] CNR, IST LAMEL, I-40126 BOLOGNA, ITALY

[2] CZECHOSLOVAK ACAD SCI, IST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：C120 / C120

页数：1

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