VALENCE-BAND PHOTOEMISSION AND ELECTRON ENERGY-LOSS STUDIES OF REACTIVE ION ETCHED SILICON DIOXIDE

被引：2
|
作者：
ROBEY, SW
OEHRLEIN, GS
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期
关键词：
D O I：
10.1116/1.575349
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：1503 / 1507
页数：5
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