DEEP CENTERS AND BLUE-GREEN ELECTROLUMINESCENCE OF 4H-SIC

被引：0
|
作者：
ANIKIN, MM
LEBEDEV, AA
POLETAEV, NK
STRELCHUK, AM
SYRKIN, AL
CHELNOKOV, VE
机构：
来源：
SEMICONDUCTORS | 1994年 / 28卷 / 03期
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D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The DLTS spectra and the electroluminescence spectra of p-n structures, fabricated from 4H-SiC by sublimation epitaxy and ion implantation of Al, have been studied. The results agree qualitatively with results found in a study of 6H-SiC p-n structures fabricated by similar methods. The electroluminescence characteristics of 4H-SiC structures have been calculated on the basis of recombination models proposed for 6H-SiC and the parameters observed in 4H-SiC deep centers. The results agree well with the experimental results.
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页码：288 / 291
页数：4
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