110-120-GHZ MONOLITHIC LOW-NOISE AMPLIFIERS

被引：6

作者：

WANG, H ^{[1
]}

TON, TN ^{[1
]}

TAN, KL ^{[1
]}

GARSKE, DC ^{[1
]}

DOW, GS ^{[1
]}

BERENZ, J ^{[1
]}

POSPIESZALSKI, MW ^{[1
]}

PAN, SK ^{[1
]}

机构：

[1] NATL RADIO ASTRON OBSERV,CHARLOTTESVILLE,VA 22903

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1993年 / 28卷 / 10期

关键词：

D O I：

10.1109/4.237511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the development of 110-120-GHz monolithic low-noise amplifiers (LNA's) using 0.1-mum pseudomorphic AlGaAs/InGaAs/GaAs low-noise HEMT technology. Two 2-stage LNA's have been designed, fabricated, and tested. The first amplifier demonstrates a gain of 12 dB at 112 to 115 GHz with a noise figure of 6.3 dB when biased for high gain, and a noise figure of 5.5 dB is achieved with an associated gain of 10 dB at 113 GHz when biased for low-noise figure. The other amplifier has a measured small-signal gain of 19.6 dB at 110 GHz with a noise figure of 3.9 dB. A noise figure of 3.4 dB with 15.6-dB associated gain was obtained at 113 GHz. The small-signal gain and noise figure performance for the second LNA are the best results ever achieved for a two-stage HEMT amplifier at this frequency band. To our knowledge, this is the first report of monolithic amplifiers operating above 100 GHz using three-terminal devices.

引用

页码：988 / 993

页数：6

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