QUANTUM-CONFINED STARK-EFFECT IN STEPPED-POTENTIAL QUANTUM-WELLS

被引：30
|
作者：
MORITA, M
GOTO, K
SUZUKI, T
机构：
[1] Science and Technical Research Laboratories of NHK (Japan Broadcasting Corp.), Tokyo, 157, 1-10-11, Kinuta, Setagaya-ku
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 09期
关键词：
Exciton; LnGaAs/GaAs; Quantum well; Stark effect;
D O I：
10.1143/JJAP.29.L1663
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A multi-quantum well pin diode which contains quantum wells where the band gap changes in a steplike manner along the growth direction has been grown by molecular beam epitaxy. The quantum-confined Stark effect has been observed by photocurrent spectroscopy at room temperature, and a larger red shift of the lowest exciton absorption peak in comparison with the conventional rectangular-shaped quantum well has been observed under a considerably large amount of applied electric field. © 1990 The Japan Society of Applied Physics.
引用
收藏
页码：L1663 / L1665
页数：3
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