MINORITY-CARRIER LIFETIME IN SINGLE CRYSTALLINE SILICON BY SURFACE PHOTO-VOLTAGE MEASUREMENTS

被引：0
|
作者：
CHU, TL [1 ]
STOKES, ED [1 ]
机构：
[1] SO METHODIST UNIV,DALLAS,TX 75275
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C135 / C136
页数：2
相关论文
共 50 条
  • [1] EVALUATION OF THE SURFACE PHOTO-VOLTAGE METHOD OF MINORITY-CARRIER DIFFUSION-LENGTH MEASUREMENT
    ALAM, MK
    YEOW, YT
    SOLID-STATE ELECTRONICS, 1981, 24 (12) : 1117 - 1119
  • [2] COMPARISON OF CARRIER LIFETIME MEASUREMENTS BY PHOTOCONDUCTIVE DECAY AND SURFACE PHOTO-VOLTAGE METHODS
    CHU, TL
    STOKES, ED
    JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) : 2996 - 2997
  • [3] RADIATION-DAMAGE AND MINORITY-CARRIER LIFETIME IN CRYSTALLINE SILICON
    BHORASKAR, VN
    DHOLE, SD
    SINGH, S
    JAHAGIRDAR, SM
    SRINIVAS, KS
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 62 (01): : 99 - 102
  • [4] MINORITY-CARRIER LIFETIME OF GAAS ON SILICON
    AHRENKIEL, RK
    ALJASSIM, MM
    KEYES, B
    DUNLAVY, D
    JONES, KM
    VERNON, SM
    DIXON, TM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (03) : 996 - 1000
  • [5] MINORITY-CARRIER LIFETIME IN SILICON PROCESSING
    PAK, MS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : C331 - C331
  • [6] MINORITY-CARRIER LIFETIME OF GAAS ON SILICON
    AHRENKIEL, RK
    ALJASSIM, MM
    DUNLAVY, DJ
    JONES, KM
    VERNON, SM
    TOBIN, SP
    HAVEN, VE
    CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 684 - 688
  • [7] MINORITY-CARRIER LIFETIME AND BACKSCATTERING MEASUREMENTS OF ION-GETTERED SILICON
    RYSSEL, H
    KRANZ, H
    BAYERL, P
    SCHMIEDT, B
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 125 - 132
  • [8] MINORITY-CARRIER LIFETIME OF ION GETTERED SILICON
    RYSSEL, H
    SCHMIEDT, B
    KRANZ, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C360 - C360
  • [9] THE EFFECT OF QUENCHING ON THE MINORITY-CARRIER LIFETIME IN SILICON
    MILEVSKII, LS
    SOVIET PHYSICS-SOLID STATE, 1961, 2 (09): : 1931 - 1933
  • [10] CONTACTLESS MEASUREMENT OF MINORITY-CARRIER LIFETIME IN SILICON
    WHITE, JC
    UNTER, TF
    SMITH, JG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) : 1217 - 1218
12345