INTERATOMIC POTENTIALS IN SILICON

被引：1
|
作者：
MAZZONE, AM
机构：
[1] Istituto LAMEL, Consiglio Nazionale delle Richerche, Bologna
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1991年 / 165卷 / 02期
关键词：
D O I：
10.1002/pssb.2221650209
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A study is made, based on molecular dynamics simulations, of the properties of interatomic potentials currently used to describe solid structures with covalent bonding. From these studies it appears that none of the available forms of potentials leads to a satisfactory description of bulk silicon.
引用
收藏
页码：395 / 400
页数：6
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