FRACTIONATION EFFECT IN ANNEALING OF RADIATION DAMAGED SILICON

被引：2
|
作者：
FANG, PH
RYAN, JL
TARKO, HB
机构：
来源：
PHYSICS LETTERS A | 1970年 / A 33卷 / 02期
关键词：
D O I：
10.1016/0375-9601(70)90659-6
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：75 / &
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