HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS

被引：194

作者：

FANG, FF

FOWLER, AB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 04期

关键词：

D O I：

10.1063/1.1659111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1825 / +

页数：1

共 16 条

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[9] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].

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[10]

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