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- [33] Very short TAT ULSI trial manufacturing line construction 1997 IEEE INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING CONFERENCE PROCEEDINGS, 1997, : P19 - P22
- [34] Metallic Contamination Control in Leading-edge ULSI Manufacturing ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES IX: UCPSS 2008-9TH INTERNATIONAL SYMPOSIUM ON ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES (UCPSS), 2009, 145-146 : 115 - 121
- [36] SELECTIVE TUNGSTEN CHEMICAL-VAPOR-DEPOSITION WITH HIGH DEPOSITION RATE FOR ULSI APPLICATION JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 451 - 454
- [37] Chemical vapor deposition of TiAlN film by using titanium tetrachloride, dimethylethylamine alane and ammonia gas for ULSI Cu diffusion barrier application JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (12): : 8253 - 8257
- [39] Seedless electrochemical deposition of copper on liner materials for ULSI devices THIN FILM MATERIALS, PROCESSES, AND RELIABILITY: PLASMA PROCESSING FOR THE 100 NM NODE AND COPPER INTERCONNECTS WITH LOW-K INTER-LEVEL DIELECTRIC FILMS, 2003, 2003 (13): : 122 - 136
- [40] Thin film silver deposition by electroplating for ULSI interconnect applications Korean Journal of Chemical Engineering, 2009, 26 : 265 - 268