ZNTE - A POTENTIAL INTERLAYER TO FORM LOW-RESISTANCE BACK CONTACTS IN CDS/CDTE SOLAR-CELLS

被引：118

作者：

RIOUX, D ^{[1
]}

NILES, DW ^{[1
]}

HOCHST, H ^{[1
]}

机构：

[1] NATL RENEWABLE ENERGY LAB,GOLDEN,CO 80401

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 12期

关键词：

D O I：

10.1063/1.353406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the structural and electronic properties of the ZnTe/CdTe(100) interface with reflection high-energy electron diffraction and angle-resolved synchrotron radiation photoemission spectroscopy (ARPES). ZnTe overlayers grown at 300-degrees-C on CdTe(100) were fully strained and pseudomorphic up to almost-equal-to 16 angstrom. Beyond this coverage the ZnTe film starts to gradually relax the 6.6% in-plane lattice strain. Complete relaxation is reached at a ZnTe coverage of approximately 300 angstrom. A valence-band offset of DELTAE(v) = 0.00+/-0.05 eV was measured with ARPES at the GAMMA point. This propitious band lineup may allow for the use of a ZnTe intermediate layer at metal/CdTe structures to induce ohmic back contacts in CdS/CdTe heterojunction solar cells.

引用

页码：8381 / 8385

页数：5

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