CRITICAL-TEMPERATURE OF THIN NIOBIUM FILMS ON HEAVILY DOPED SILICON

被引：6

作者：

VANHUFFELEN, WM ^{[1
]}

KLAPWIJK, TM ^{[1
]}

SUURMEIJER, EPTM ^{[1
]}

机构：

[1] UNIV GRONINGEN,CTR MAT SCI,9747 AG GRONINGEN,NETHERLANDS

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.47.5151

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Measurements of the critical temperature are presented for 20-40 nm niobium films on heavily doped n- and p-type silicon, for a wide range of silicon doping concentrations and sample preparation methods. Contrary to a normal-metal-superconductor bilayer, a depression of the critical temperature does not occur in the semiconductor-superconductor system. We show the absence of a depression to be consistent with conventional theories for the proximity effect between a superconductor and a normal metal. It is due to the large mismatch in material parameters between the two layers.

引用

页码：5151 / 5156

页数：6

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