POLYCRYSTALLINE SILICON BY GLOW-DISCHARGE TECHNIQUE

被引：20

作者：

MORIN, F

MOREL, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 09期

关键词：

D O I：

10.1063/1.91254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：686 / 687

页数：2

共 50 条

[1] GLOW-DISCHARGE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
HIRAI, Y
OSADA, Y
KOMATSU, T
OMATA, S
AIHARA, K
NAKAGIRI, T
APPLIED PHYSICS LETTERS, 1983, 42 (08) : 701 - 703
[2] STRUCTURE OF GLOW-DISCHARGE AMORPHOUS SILICON
GRACZYK, JF
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 436 - 436
[3] STRUCTURE OF GLOW-DISCHARGE AMORPHOUS SILICON
GRACZYK, JF
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (01): : 231 - 242
[4] GAP STATES IN HYDROGENATED MICROCRYSTALLINE SILICON GROWN BY GLOW-DISCHARGE TECHNIQUE
DUSANE, SR
JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) : 2923 - 2926
[5] ION TREATMENT OF SILICON IN A GLOW-DISCHARGE
SOKOLOWSKI, M
SOKOLOWSKA, A
ROLINSKI, E
MICHALSKI, A
THIN SOLID FILMS, 1975, 30 (01) : 29 - 35
[6] DEPOSITION TECHNIQUE FOR AMORPHOUS-SILICON - GLOW-DISCHARGE DECOMPOSITION OF SILANE
MATSUDA, A
DENKI KAGAKU, 1984, 52 (07): : 398 - 402
[7] REFLECTIVITY AND DIELECTRIC FUNCTION OF GLOW-DISCHARGE SILICON
WEISER, G
EWALD, D
MILLEVILLE, M
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 447 - 452
[8] CONFINED OXYGEN GLOW-DISCHARGE CLEANING OF SILICON
HOFFMAN, DM
THOMAS, JH
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 536 - 538
[9] LUMINESCENCE IN GLOW-DISCHARGE DEPOSITED AMORPHOUS SILICON
STREET, RA
KNIGHTS, JC
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 248 - 248
[10] ELECTRONIC PROPERTIES OF CRYSTALLIZED GLOW-DISCHARGE SILICON
REILLY, OJ
SPEAR, WE
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (03): : 295 - 302

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