DOPING GRADIENTS IN LAYERS OF GALLIUM-PHOSPHIDE GROWN BY LIQUID EPITAXY

被引:14
|
作者
SUDLOW, PD
MOTTRAM, A
PEAKER, AR
机构
关键词
D O I
10.1007/BF02403503
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:168 / &
相关论文
共 50 条
  • [21] Boron doping of silicon layers grown by liquid phase epitaxy
    McCann, MJ
    Weber, KJ
    Petravic, M
    Blakers, AW
    JOURNAL OF CRYSTAL GROWTH, 2002, 241 (1-2) : 45 - 50
  • [22] OPTOELECTRONIC BISTABILITY IN GALLIUM-PHOSPHIDE
    CHOI, MS
    HUR, JH
    GUNDERSEN, MA
    APPLIED PHYSICS LETTERS, 1988, 52 (19) : 1563 - 1565
  • [23] INDUCED BIREFRINGENCE IN GALLIUM-PHOSPHIDE
    GLURDZHI.LN
    IZERGIN, AP
    KOPYLOVA, ZN
    REMENYUK, AD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (02): : 305 - 306
  • [24] MAGNETOOPTICAL TRANSITIONS IN GALLIUM-PHOSPHIDE
    BELOV, NP
    KRYLOV, KI
    PROKOPENKO, VT
    YASKOV, AD
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1987, 30 (07): : 66 - 70
  • [25] SUPERCONDUCTIVITY OF METALLIC GALLIUM-PHOSPHIDE
    TIMOFEEV, YA
    VINOGRADOV, BV
    YAKOVLEV, EN
    FIZIKA NIZKIKH TEMPERATUR, 1981, 7 (11): : 1479 - 1481
  • [26] THE COL SPECTRUM IN GALLIUM-PHOSPHIDE
    DEAN, PJ
    MONEMAR, B
    GISLASON, HP
    HERBERT, DC
    JOURNAL OF LUMINESCENCE, 1981, 24-5 (NOV) : 401 - 404
  • [27] PHOTOCONDUCTIVITY OF COMPENSATED GALLIUM-PHOSPHIDE
    IVASHCHENKO, AI
    SAMORUKOV, BE
    SLOBODCHIKOV, SV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (10): : 1269 - 1273
  • [28] RADIATION DEFECTS IN GALLIUM-PHOSPHIDE
    NEMETS, OF
    VOLKOV, VV
    LITOVCHENKO, PG
    MAKARENKO, VG
    OPILAT, VY
    TARTACHNIK, VP
    TYCHINA, II
    DOPOVIDI AKADEMII NAUK UKRAINSKOI RSR SERIYA A-FIZIKO-MATEMATICHNI TA TECHNICHNI NAUKI, 1988, (05): : 47 - 50
  • [29] PHOTOSENSITIVITY OF COMPENSATED GALLIUM-PHOSPHIDE
    POPOV, YG
    PUTILOVSKAYA, MY
    SLOBODCHIKOV, SV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (06): : 653 - 655
  • [30] DIELECTRIC SCREENING IN GALLIUM-PHOSPHIDE
    SINGH, MR
    BALASUBRAMANIAN, S
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1979, 17 (07) : 413 - 415