0.13 MU-M PATTERN DELINEATION USING KRF EXCIMER-LASER LIGHT

被引：6
|
作者：
IMAI, A
ASAI, N
UENO, T
HASEGAWA, N
TANAKA, T
TERASAWA, T
OKAZAKI, S
机构：
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji city, Tokyo, 185
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12B期
关键词：
OPTICAL LITHOGRAPHY; KRF; GIGABIT; RESOLUTION; DOF; RESIST;
D O I：
10.1143/JJAP.33.6816
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper investigates the resolution limit of KrF excimer laser lithography using phase-shifting mask (PSM) technology by simulation and experiment. An improved phase-shifting mask structure combined with a newly developed crosslinking type negative-tone resist on a reflection-suppressed trilayer resist makes it possible to delineate minimum pattern size of 0.13 mu m with sufficient depth of focus, using a high-NA lens system under high coherent light. These results show that KrF excimer laser lithography applying PSM technology is a good candidate for gigabit-level ULSI fabrication by lithography.
引用
收藏
页码：6816 / 6822
页数：7
相关论文
共 50 条
  • [41] ABSORPTION OF SPHERICALLY CONVERGENT 1.06 MU-M LASER LIGHT BY GLASS MICROSHELLS
    DOWNWARD, JG
    GRANDEY, RA
    MAYER, FJ
    MITROVICH, D
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (10): : 1247 - 1247
  • [42] KRF EXCIMER LASER PROJECTION LITHOGRAPHY - 0.35-MU-M MINIMUM SPACE VLSI PATTERN FABRICATION BY A TRI-LEVEL RESIST PROCESS
    SATO, T
    NAKASE, M
    NONAKA, M
    HIGASHIKAWA, I
    HORIIKE, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (02): : 323 - 327
  • [43] Hollow fiber delivery of ArF and KrF excimer laser light
    Matsuura, Y
    SPECIALTY FIBER OPTICS FOR MEDICAL APPLICATIONS, PROCEEDINGS OF, 1999, 3596 : 2 - 7
  • [44] NEW TECHNOLOGIES OF KRF EXCIMER-LASER LITHOGRAPHY SYSTEM IN 0.25 MICRON COMPLEX CIRCUIT PATTERNS
    SASAGO, M
    MATSUO, T
    YAMASHITA, K
    ENDO, M
    MATSUOKA, K
    KOIZUMI, T
    KATSUYAMA, A
    NOMURA, N
    IEICE TRANSACTIONS ON ELECTRONICS, 1994, E77C (03) : 416 - 424
  • [45] Imaging characteristics of 0.12 μm dynamic random access memory pattern by KrF excimer laser lithography
    Nakao, Shuji
    Tsujita, Kouichirou
    Arimoto, Ichirou
    Wakamiya, Wataru
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (12 B): : 6985 - 6993
  • [46] Imaging characteristics of 0.12 μm dynamic random access memory pattern by KrF excimer laser lithography
    Nakao, S
    Tsujita, K
    Arimoto, I
    Wakamiya, W
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12B): : 6985 - 6993
  • [47] Aberration effects in the region of 0.18 mu m lithography with KrF excimer stepper
    Yim, DY
    Lim, CM
    Kim, HS
    Baik, KH
    OPTICAL MICROLITHOGRAPHY X, 1997, 3051 : 714 - 723
  • [48] PHOTOABLATION OF GELATIN WITH THE FREE-ELECTRON LASER BETWEEN 2.7 MU-M AND 6.7 MU-M
    JEAN, B
    BENDE, T
    JOURNAL OF REFRACTIVE AND CORNEAL SURGERY, 1994, 10 (04): : 433 - 438
  • [49] Observation of graphene growing process on SiC(0001) surface formed by KrF excimer-laser irradiation
    Hattori, Masakazu
    Ikenoue, Hiroshi
    Nakamura, Daisuke
    Okada, Tatsuo
    LASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING (LAMOM) XXI, 2016, 9735
  • [50] MONOLAYER HALF-TONE PHASE-SHIFTING MASK FOR KRF EXCIMER-LASER LITHOGRAPHY
    IWABUCHI, Y
    USHIODA, J
    TANABE, H
    OGURA, Y
    KISHIDA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12B): : 5900 - 5902
12345