0.13 MU-M PATTERN DELINEATION USING KRF EXCIMER-LASER LIGHT

被引：6

作者：

IMAI, A

ASAI, N

UENO, T

HASEGAWA, N

TANAKA, T

TERASAWA, T

OKAZAKI, S

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji city, Tokyo, 185

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12B期

关键词：

OPTICAL LITHOGRAPHY; KRF; GIGABIT; RESOLUTION; DOF; RESIST;

D O I：

10.1143/JJAP.33.6816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper investigates the resolution limit of KrF excimer laser lithography using phase-shifting mask (PSM) technology by simulation and experiment. An improved phase-shifting mask structure combined with a newly developed crosslinking type negative-tone resist on a reflection-suppressed trilayer resist makes it possible to delineate minimum pattern size of 0.13 mu m with sufficient depth of focus, using a high-NA lens system under high coherent light. These results show that KrF excimer laser lithography applying PSM technology is a good candidate for gigabit-level ULSI fabrication by lithography.

引用

页码：6816 / 6822

页数：7

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