A NEW METASTABLE EPITAXIAL SILICIDE - FESI2/SI(111)

被引：29
|
作者：
DEPARGA, ALV
DELAFIGUERA, J
OCAL, C
MIRANDA, R
机构：
[1] Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Cantoblanco
来源：
ULTRAMICROSCOPY | 1992年 / 42卷
关键词：
D O I：
10.1016/0304-3991(92)90367-S
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
A metastable phase of FeSi2 that is not present in the bulk phase diagram can be grown epitaxially on Si(111). Scanning tunneling microscope images reveal the surface reconstruction of this phase and allows one to model its crystallographic structure. It crystallizes with a cubic structure, probably a fluorite structure like CoSi2 and NiSi2, lattice-matched to Si. The (111) surface has a 2 x 2 reconstruction according to LEED. The origin of this reconstruction is reported here for the first time. It is due to a superstructure of Si adatoms with local bonding similar to that of the adatoms in the Si(111)7 x 7 reconstruction.
引用
收藏
页码：845 / 850
页数：6
相关论文
共 50 条
  • [21] Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si(111) substrate
    Kuroda, R
    Liu, ZX
    Fukuzawa, Y
    Suzuki, Y
    Osamura, M
    Wang, S
    Otogawa, N
    Ootsuka, T
    Mise, T
    Hoshino, Y
    Nakayama, Y
    Tanoue, H
    Makita, Y
    THIN SOLID FILMS, 2004, 461 (01) : 34 - 39
  • [22] Comparison of structure and luminescence between β-FeSi2/Si (100) and β-FeSi2/Si (111) heterojunctions prepared by pulsed laser deposition
    Xu, S. C.
    Gao, S. B.
    Liu, M.
    Yang, C.
    Chen, C. S.
    Jiang, S. Z.
    Gao, X. G.
    Sun, Z. C.
    Man, B. Y.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2012, 6 (1-2): : 68 - 72
  • [23] SURFACE CHARACTERIZATION OF EPITAXIAL, SEMICONDUCTING, FESI2 GROWN ON SI(100)
    ALVAREZ, J
    HINAREJOS, JJ
    MICHEL, EG
    GALLEGO, JM
    DEPARGA, ALV
    DELAFIGUERA, J
    OCAL, C
    MIRANDA, R
    APPLIED PHYSICS LETTERS, 1991, 59 (01) : 99 - 101
  • [24] Thermoelectric properties of epitaxial β-FeSi2 thin films grown on Si(111) substrates with various film qualities
    Watanabe, Kentaro
    Taniguchi, Tatsuhiko
    Sakane, Shunya
    Aoki, Shunsuke
    Suzuki, Takeyuki
    Fujita, Takeshi
    Nakamura, Yoshiaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (05)
  • [25] Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures
    Liu, Hongfei
    Tan, Chengcheh
    Chi, Dongzhi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2012, 30 (04):
  • [26] High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si(111) by molecular beam epitaxy
    Ji, SY
    Lalev, GM
    Wang, JF
    Uchikoshi, M
    Isshiki, M
    MATERIALS LETTERS, 2005, 59 (18) : 2370 - 2373
  • [27] Formation of ferromagnetic interface between β-FeSi2 and Si(111) substrate
    Hattori, Azusa N.
    Hattori, Ken
    Kodama, Kenji
    Hosoito, Nobuyoshi
    Daimon, Hiroshi
    APPLIED PHYSICS LETTERS, 2007, 91 (20)
  • [28] Formation of β-FeSi2 film by deposition Fe on Si(111) substrate
    Li, Qiang
    Wang, Hai-Yan
    Gongneng Cailiao/Journal of Functional Materials, 2006, 37 (11): : 1762 - 1764
  • [29] Low temperature growth of β-FeSi2 films on Si(111) by RF magnetron sputtering using a FeSi2 alloy target
    Yoshitake, T
    Hanada, T
    Nagayama, K
    JOURNAL OF MATERIALS SCIENCE LETTERS, 2000, 19 (07) : 537 - 538
  • [30] Luminescent FeSi2/Si(111) structures induced by heteroepitaxial stress
    Yamaguchi, K
    Mizushima, K
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 223 (01): : 253 - 257
12345