THRESHOLD VOLTAGE AND GAIN TERM BETA OF ION-IMPLANTED ENHANCEMENT-MODE N-CHANNEL MOS-TRANSISTORS

被引：14
|
作者：
KAMOSHID.M [1 ]
机构：
[1] NIPPON ELECT CO LTD,KAWASAKI,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 08期
关键词：
D O I：
10.1063/1.1654691
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：404 / 405
页数：2
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