INFRARED ABSORPTION IN N-TYPE ALUMINUM ANTIMONIDE

被引：53

作者：

TURNER, WJ

REESE, WE

机构：

来源：

PHYSICAL REVIEW | 1960年 / 117卷 / 04期

关键词：

D O I：

10.1103/PhysRev.117.1003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1003 / 1004

页数：2

共 50 条

[41] ELECTRICAL CONDUCTIVITY OF N-TYPE INDIUM ANTIMONIDE AT LOW TEMPERATURES
DEVYATKO.AG
KOGAN, SM
LIFSHITS, TM
OLEINIKO.AY
SOVIET PHYSICS SOLID STATE,USSR, 1964, 6 (06): : 1300 - +
[42] MAGNETIC FREEZE-OUT IN N-TYPE INDIUM ANTIMONIDE
MANSFIEL.R
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14): : 2084 - &
[43] GENERATION OF MICROWAVE RADIATION IN N-TYPE INDIUM-ANTIMONIDE
ARONZON, BA
MEILIKHOV, EZ
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (04): : 474 - 477
[44] MICROWAVE EMISSION FROM BULK OF N-TYPE INDIUM ANTIMONIDE
BERS, A
WALLACE, RN
PHYSICAL REVIEW LETTERS, 1970, 25 (10) : 665 - &
[45] Nonthermal broadening of landau levels in n-type indium antimonide
Kadushkin V.I.
Bulaev N.I.
Klyshevich E.V.
Shangbia E.L.
Russian Physics Journal, 1997, 40 (8) : 791 - 793
[46] ELECTRICAL PROPERTIES OF PLASTICALLY DEFORMED INDIUM ANTIMONIDE OF N-TYPE
DVORKIN, BA
KRAVCHEN.AF
PALKIN, AM
EDELMAN, FL
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1967, (01): : 93 - &
[47] HALL VELOCITY OF HOT ELECTRONS IN N-TYPE INDIUM ANTIMONIDE
LICEA, I
PHYSICS LETTERS A, 1970, A 31 (06) : 306 - &
[48] ELECTRICAL CONDUCTIVITY OF N-TYPE INDIUM ANTIMONIDE AT LOW TEMPERATURES
DEVYATKOV, AG
KOGAN, SM
LIFSHITS, TM
OLEINIKOV, AY
SOVIET PHYSICS-SOLID STATE, 1964, 6 (06): : 1300 - 1304
[49] ELECTRICAL PROPERTIES OF HEAVILY DOPED N-TYPE INDIUM ANTIMONIDE
DASHEVSKII, MY
FILIPCHENKO, AS
OKUN, LS
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 5 (03): : 597 - +
[50] GENERATION OF MICROWAVE RADIATION IN N-TYPE INDIUM ANTIMONIDE.
Aronzon, B.A.
Meilikhov, E.Z.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1973, 7 (04): : 474 - 477

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