A SUPERLOW-NOISE ALGAAS/INGAAS/GAAS DOPED CHANNEL HETEROJUNCTION FIELD-EFFECT TRANSISTOR (DC-HFET) WITH 0.15-MU-M GATE LENGTH

被引：1
|
作者：
SAWADA, M
NAGAMI, K
NISHIDA, M
KAIZAKI, Y
INOUE, D
HARADA, Y
机构：
[1] Semiconductor Research Center, SANYO Electric Co. Ltd., Hirakata, Osaka
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期
关键词：
DOPED CHANNEL; HETEROJUNCTION FET; INGAAS; LOW-NOISE PERFORMANCE; T-SHAPED GATE;
D O I：
10.1143/JJAP.30.3837
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A doped channel heterojunction field-effect transistor (DC-HFET) has been developed using an AlGaAs/InGaAs/GaAs pseudomorphic system which has an electron confinement effect superior to that of an AlGaAs/GaAs system. An excellent minimum noise figure (NF(min)) of 0.65 dB and associated gain (Ga) of 11.3 dB were realized at 12 GHz (drain current (I(ds)) = 18 mA, drain voltage (V(ds)) = 2 V). The NF had weak dependences on the I(ds) and frequency, as in the case of high electron mobility transistors (HEMTs). The transconductance (g(m)) at I(ds) = 10 mA was 385 mS/mm and maximum g(m) reached 570 mS/mm (I(ds) = 50 mA).
引用
收藏
页码：3837 / 3839
页数：3
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