SYSTEMATICS OF CHEMICAL AND STRUCTURAL DISORDER ON BAND-EDGE PROPERTIES OF SEMICONDUCTOR ALLOYS

被引：11
|
作者：
KRISHNAMURTHY, S [1 ]
BERDING, MA [1 ]
SHER, A [1 ]
CHEN, AB [1 ]
机构：
[1] AUBURN UNIV,AUBURN,AL 36849
来源：
PHYSICAL REVIEW B | 1988年 / 37卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.37.4254
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4254 / 4257
页数：4
相关论文
共 50 条
  • [31] Stress influence on band-edge luminescence properties of 4H-AlN
    Cheng, Y. C.
    Wu, X. L.
    Li, S. H.
    Chu, Paul K.
    APPLIED PHYSICS LETTERS, 2009, 95 (12)
  • [32] Biologically inspired band-edge laser action from semiconductor with dipole-forbidden band-gap transition
    Cih-Su Wang
    Chi-Shung Liau
    Tzu-Ming Sun
    Yu-Chia Chen
    Tai-Yuan Lin
    Yang-Fang Chen
    Scientific Reports, 5
  • [33] Near band-edge and excitonic behavior of GaAsN epilayers grown by Chemical Beam Epitaxy
    Coaquira, JAH
    Bhusal, L
    Zhu, W
    Fotkatzikis, A
    Pinault, MA
    Litvinchuk, AP
    Freundlich, A
    PROGRESS IN COMPOUND SEMICONDUCTOR MATERIALS IV-ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2005, 829 : 505 - 510
  • [34] Red shift of the band-edge photoluminescence emission and effects of annealing and capping agent on structural and optical properties of ZnO nanoparticles
    Verma, D.
    Kole, A. K.
    Kumbhakar, P.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 625 : 122 - 130
  • [35] Efficient Band-Edge Emission from Indirect Bandgap Semiconductor Quantum Dots upon Shell Engineering
    Zhai, Jingwen
    Dong, Tieshuan
    Zhou, Yamei
    Min, Jingjing
    Yan, Yuli
    Garoufalis, Christos S.
    Baskoutas, Sotirios
    Xu, Dangdang
    Zeng, Zaiping
    NANO LETTERS, 2023, 23 (08) : 3239 - 3244
  • [36] Narrow band-edge photoluminescence from AgInS2 semiconductor nanoparticles by the formation of amorphous III–VI semiconductor shells
    Taro Uematsu
    Kazutaka Wajima
    Dharmendar Kumar Sharma
    Shuzo Hirata
    Takahisa Yamamoto
    Tatsuya Kameyama
    Martin Vacha
    Tsukasa Torimoto
    Susumu Kuwabata
    NPG Asia Materials, 2018, 10 : 713 - 726
  • [37] EFFECTS OF UNIAXIAL STRAIN ON BAND-EDGE OPTICAL TRANSITIONS IN A DIRECT ZINC-BLENDE-STRUCTURE SEMICONDUCTOR
    BAILEY, PT
    PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 588 - &
  • [38] OPTICAL-PROPERTIES OF THE BAND-EDGE EXCITON IN GASE CRYSTALS AT 10K
    LETOULLEC, R
    PICCIOLI, N
    CHERVIN, JC
    PHYSICAL REVIEW B, 1980, 22 (12): : 6162 - 6170
  • [39] Anomalous properties of the band-edge states in large two-dimensional photonic quasicrystals
    Lai, Yun
    Zhang, Zhao-Qing
    Chan, Chi-Hou
    Tsang, Leung
    PHYSICAL REVIEW B, 2007, 76 (16):
  • [40] Enhancement of conduction-band effective mass in III-V semiconductor alloys induced by chemical disorder
    Fan, JC
    Chen, YF
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (12) : 6761 - 6765
12345