INITIAL-STAGE GROWTH OF IN AND AL ON A SINGLE-DOMAIN SI(001)2X1 SURFACE

被引:47
|
作者
YEOM, HW
ABUKAWA, T
NAKAMURA, M
SUZUKI, S
SATO, S
SAKAMOTO, K
SAKAMOTO, T
KONO, S
机构
[1] TOHOKU UNIV, FAC SCI, DEPT PHYS, SENDAI, MIYAGI 98077, JAPAN
[2] TOHOKU UNIV, SCI MEASUREMENTS RES INST, SENDAI, MIYAGI 98077, JAPAN
[3] ELECTROTECH LAB, TSUKUBA, IBARAKI 305, JAPAN
关键词
ADATOMS; ALUMINUM; GROWTH; INDIUM; LOW ENERGY ELECTRON DIFFRACTION (LEED); LOW INDEX SINGLE CRYSTAL SURFACES; METAL-SEMICONDUCTOR INTERFACES; SILICON; X-RAY PHOTOELECTRON SPECTROSCOPY;
D O I
10.1016/0039-6028(95)00688-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Initial stage growth of In and Al on a wide-terrace single-domain Si(001)2 X 1 surface has been studied by low-energy electron diffraction (LEED) and X-ray photoelectron spectroscopy. Several submonolayer phases that were not reported on double-domain Si(001)2 X 1 substrates are observed, in addition to those already reported. The resulting sequences of two-dimensional (2D) phases for In and Al coverages of less than or equal to 0.5 ML can be interpreted based on an order-disorder transition of arrays of 1D metal-dimer chains. The results show close resemblance to the initial growth of Ga on Si(001) and thus indicate that there is a general mode of growth for the Group-III metals on a Si(001)2 X 1 surface below 0.5 ML. Growth for coverages greater than 0.5 ML and the onset of 3D growth are also discussed.
引用
收藏
页码:328 / 334
页数:7
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