IMPROVEMENT OF ON-RESISTANCE OF MOS-GATED DEVICES

被引：3
|
作者：
BAUDELOT, E
CHANTE, JP
URGELL, JJ
机构：
来源：
ELECTRONICS LETTERS | 1982年 / 18卷 / 13期
关键词：
D O I：
10.1049/el:19820370
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：546 / 547
页数：2
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