ROUGHNESS OF THE SILICON (001)/SIO2 INTERFACE

被引：36
|
作者：
TANG, MT
EVANSLUTTERODT, KW
HIGASHI, GS
BOONE, T
机构：
[1] AT and T Bell Laboratories, Murray Hill
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期
关键词：
D O I：
10.1063/1.109109
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We use synchrotron x-ray diffraction to characterize the roughness of the buried Si(001)/SiO2 interface, for three types of oxide, without modification of the.interface. We show that the thermal oxide interface is 0.5 +/- 0.1 times as rough as the native oxide interface, suggesting that the oxide growth decreases the roughness slightly. We also measure the roughness of a chemically grown oxide interface.
引用
收藏
页码：3144 / 3146
页数：3
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