AMORPHOUS-SILICON FET WITH SCHOTTKY CONTACTS

被引：2
|
作者：
AST, DG [1 ]
机构：
[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 10期
关键词：
D O I：
10.1109/T-ED.1981.20587
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1257 / 1258
页数：2
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