MEASUREMENT OF N-TYPE GERMANIUM MICROWAVE CONDUCTIVITY DRUING IMPACT IONIZATION OF IMPURITIES AT 4.2 DEGREES K

被引：2

作者：

PALMIER, JF

机构：

来源：

PHYSICAL REVIEW LETTERS | 1970年 / 25卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.25.864

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：864 / &

共 50 条

[21] UHF CONDUCTIVITY OF N-TYPE GERMANIUM WITH DISLOCATIONS
OSIPIAN, YA
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[22] MAGNETORESISTANCE OF HEAVILY DOPED N- AND P-TYPE GERMANIUM AT 4.2 DEGREES K
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[23] MICROWAVE FARADAY EFFECT IN N-TYPE GERMANIUM
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[24] IMPACT IONIZATION IN N-TYPE INSB AT 77-K
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[25] ELECTRON IRRADIATION OF P-TYPE GERMANIUM AT 4.2 DEGREES K
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[26] MEASUREMENT OF FREE CARRIER FARADAY EFFECT IN N-TYPE GERMANIUM AT MICROWAVE FREQUENCIES
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[27] ANISOTROPY OF MICROWAVE COMPLEX CONDUCTIVITY DUE TO HOT-ELECTRONS IN N-TYPE GERMANIUM
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[28] TRANSPORT PROPERTIES OF N-TYPE AND P-TYPE BI2SE3, 4.2 DEGREES K TO 300 DEGREES K
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[29] ELECTRICAL CONDUCTIVITY OF N-TYPE INSB AT 0.3-20 DEGREES K
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[30] RECOMBINATION OF THERMAL ELECTRONS IN N-TYPE GERMANIUM BELOW 10-DEGREES-K
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