DISLOCATIONS IN EPITAXIAL GALLIUM ARSENIDE

被引：0
|
作者：
KOVDA, AV
SEMILETO.SA
机构：
来源：
SOVIET PHYSICS CRYSTALLOGRAPHY, USSR | 1969年 / 13卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：561 / &
相关论文
共 50 条
  • [31] Electrodeposition of epitaxial CdSe on (111) gallium arsenide
    Cachet, H
    Cortès, R
    Froment, M
    Etcheberry, A
    THIN SOLID FILMS, 2000, 361 : 84 - 87
  • [32] EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE
    BOUCHER, A
    EASTON, BC
    PHILIPS TECHNICAL REVIEW, 1971, 32 (9-12): : 380 - 384
  • [33] PHOTOCONDUCTIVITY OF GALLIUM-ARSENIDE EPITAXIAL LAYERS
    PARENTEAU, M
    WU, FM
    JORIO, A
    CARLONE, C
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) : 5185 - 5190
  • [34] SMALL ETCH PITS IN EPITAXIAL GALLIUM ARSENIDE
    IVLEVA, OM
    YAKUBENY.MP
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1971, (01): : 148 - &
  • [35] ANALYSIS OF THIN EPITAXIAL LAVERS OF GALLIUM ARSENIDE
    KUZMIN, NM
    EMELYANO.AV
    MESHCHAN.SV
    SABATOVS.VL
    KUZOVLEV, IA
    ZAKHAROV.TI
    ZHURNAL ANALITICHESKOI KHIMII, 1971, 26 (02): : 282 - +
  • [36] The epitaxial growth of gallium arsenide using triethylarsine
    Maeda, T.
    Hata, M.
    Zempo, Y.
    Fukuhara, N.
    Matsuda, Y.
    Sawara, K.
    APPLIED ORGANOMETALLIC CHEMISTRY, 1989, 3 (02) : 151 - 156
  • [37] RECOMBINATION AND TRAPPING IN EPITAXIAL TYPE GALLIUM ARSENIDE
    ACKET, GA
    PHILIPS RESEARCH REPORTS, 1971, 26 (04): : 261 - &
  • [38] GROWTH AND EVALUATION OF GALLIUM ARSENIDE EPITAXIAL LAYERS
    BRADSHAW, A
    KNAPPETT, JE
    MACKEY, DI
    JOURNAL OF SCIENCE AND TECHNOLOGY, 1970, 37 (02): : 59 - +
  • [39] CHEMICAL TRANSPORT AND EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE
    PIZZARELLO, FA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (10) : 1059 - 1065
  • [40] REVEALING DISLOCATIONS ON THE (111) PLANE OF GALLIUM ARSENIDE BY ETCHING
    PETRUSEVICH, RL
    SOLLERTINSKAYA, ES
    PAVLOVA, OI
    SOVIET PHYSICS-SOLID STATE, 1962, 4 (05): : 1013 - 1014
12345