OXYGEN IMPURITY EFFECTS AT METAL-SILICIDE INTERFACES - FORMATION OF SILICON-OXIDE AND SUBOXIDES IN THE NI-SI SYSTEM

被引:53
|
作者
GRUNTHANER, PJ
GRUNTHANER, FJ
SCOTT, DM
NICOLET, MA
MAYER, JW
机构
[1] CALTECH,PASADENA,CA 91125
[2] CORNELL UNIV,ITHACA,NY 14853
来源
关键词
D O I
10.1116/1.571078
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:641 / 648
页数:8
相关论文
共 11 条
  • [1] INTERFACE EFFECTS IN THE FORMATION OF SILICON-OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATES
    BAGLIN, JEE
    DHEURLE, FM
    PETERSSON, CS
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1849 - 1854
  • [2] Dependence of silicide formation on the redistribution of B-impurity in Ni-Si and Ti-Si systems
    Kabardino-Balkarskij Gosudarstvennyj, Univ, Nal'chik, Russia
    Poverkhnost Fiz Khim Mekh, 2 (41-44):
  • [3] METAL-SILICON INTERFACE FORMATION - THE NI-SI AND PD-SI SYSTEMS
    GRUNTHANER, PJ
    GRUNTHANER, FJ
    MADHUKAR, A
    MAYER, JW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 649 - 656
  • [4] ATOM-PROBE STUDY OF THE EARLY STAGE OF SILICIDE FORMATION .2. NI-SI SYSTEM
    NISHIKAWA, O
    NOMURA, E
    WADA, M
    TSUNASHIMA, Y
    HORIE, S
    SHIBATA, M
    YOSHIMURA, T
    UEMORI, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 10 - 14
  • [5] INTERFACE EFFECTS IN THE FORMATION OF SILICON OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATES.
    Baglin, J.E.E.
    d'Heurle, F.M.
    Petersson, C.S.
    1849, (54):
  • [6] Reactive diffusion in the Ni-Si system: phase sequence and formation of metal-rich phases
    Lavoie, C
    Coia, C
    d'Heurle, FM
    Detavernier, C
    Cabral, C
    Desjardins, P
    Kellock, AJ
    DIFFUSION IN MATERIALS: DIMAT 2004, PTS 1 AND 2, 2005, 237-240 : 825 - 836
  • [7] EFFECTS OF THE PRESENCE OF NATIVE SILICON-OXIDE AT THE FE/SI INTERFACE ON THE FORMATION OF SILICIDES STUDIED BY AUGER-SPECTROSCOPY
    CHEMELLI, C
    DANGELO, D
    GIRARDI, G
    PIZZINI, S
    APPLIED SURFACE SCIENCE, 1993, 68 (02) : 173 - 177
  • [8] Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces
    Masahiro Hori
    Jinya Kume
    Manjakavahoaka Razanoelina
    Hiroyuki Kageshima
    Yukinori Ono
    Communications Physics, 6
  • [9] Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces
    Hori, Masahiro
    Kume, Jinya
    Razanoelina, Manjakavahoaka
    Kageshima, Hiroyuki
    Ono, Yukinori
    COMMUNICATIONS PHYSICS, 2023, 6 (01)
  • [10] PHOTOELECTROCHEMICAL CELLS OF THE ELECTROLYTE-METAL-INSULATOR-SEMICONDUCTOR (EMIS) CONFIGURATION .3. ASPECTS RELATING TO THERMAL OXIDE-GROWTH IN THE PT SILICON-OXIDE N-SI SYSTEM
    HOWE, AT
    HAWKINS, RT
    FLEISCH, TH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : 881 - 886