METAL-SILICON INTERFACE FORMATION - THE NI-SI AND PD-SI SYSTEMS

被引:113
|
作者
GRUNTHANER, PJ
GRUNTHANER, FJ
MADHUKAR, A
MAYER, JW
机构
[1] UNIV SO CALIF, LOS ANGELES, CA 90007 USA
[2] CORNELL UNIV, ITHACA, NY 14853 USA
来源
关键词
D O I
10.1116/1.571079
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:649 / 656
页数:8
相关论文
共 50 条
  • [1] ROLE OF ATOMIC BONDING FOR COMPOUND AND GLASS-FORMATION IN NI-SI PD-SI AND NI-B SYSTEMS
    TANAKA, K
    SAITO, T
    SUZUKI, K
    HASEGAWA, R
    PHYSICAL REVIEW B, 1985, 32 (10): : 6853 - 6860
  • [2] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE
    FREEOUF, JL
    RUBLOFF, GW
    HO, PS
    KUAN, TS
    PHYSICAL REVIEW LETTERS, 1979, 43 (24) : 1836 - 1839
  • [3] REACTIVE SCHOTTKY-BARRIER FORMATION - THE PD-SI INTERFACE
    FREEOUF, JL
    RUBLOFF, GW
    HO, PS
    KUAN, TS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 916 - 919
  • [4] PROPERTIES OF THE PD-SI INTERFACE DURING INITIAL SILICIDE FORMATION
    HO, PS
    FREEOUF, JL
    RUBLOFF, GW
    TAN, TY
    LEWIS, JE
    KUAN, TS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C343 - C343
  • [5] Pd-Si (Palladium-Silicon)
    Okamoto, H.
    JOURNAL OF PHASE EQUILIBRIA AND DIFFUSION, 2007, 28 (02) : 231 - 232
  • [6] Pd-Si (Palladium-Silicon)
    H. Okamoto
    Journal of Phase Equilibria and Diffusion, 2007, 28 : 231 - 232
  • [7] CHEMICAL BONDING AND REACTIONS AT THE PD-SI INTERFACE
    RUBLOFF, GW
    HO, PS
    FREEOUF, JF
    LEWIS, JE
    PHYSICAL REVIEW B, 1981, 23 (08) : 4183 - 4196
  • [8] ION-BEAM CRYSTALLOGRAPHY OF METAL SILICON INTERFACES - PD-SI(111)
    TROMP, R
    VANLOENEN, EJ
    IWAMI, M
    SMEENK, R
    SARIS, FW
    THIN SOLID FILMS, 1982, 93 (1-2) : 151 - 159
  • [9] Pd-Si (palladium-silicon) binary system
    Chandrasekharaiah, M.S., 1600, (05):
  • [10] Wetting and bonding of Ni-Si alloys on silicon carbide
    Rado, C
    Kalogeropoulou, S
    Eustathopoulos, N
    ACTA MATERIALIA, 1999, 47 (02) : 461 - 473