CHANGES OF SEMICONDUCTOR-INSULATOR INTERFACE PARAMETERS IN META-SILICON NITRIDE-OXIDE-SEMICONDUCTOR STRUCTURES UNDER DEGRADATION INFLUENCES

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作者：

ROIZIN, YO

HA, ZZ

ZHERDITSKAYA, YR

SHUMEIKO, VR

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来源：

UKRAINSKII FIZICHESKII ZHURNAL | 1990年 / 35卷 / 01期

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中图分类号：

O4 [物理学];

学科分类号：

0702 ;

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页码：92 / 96

页数：5

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