MICRODOSIMETRIC APPROACH TO ANALYSIS OF FAILURES IN SYSTEMS OF SEMICONDUCTOR-DEVICES OF A SINGLE TYPE UNDER NEUTRON-IRRADIATION

被引：0

作者：

GOLEMINOV, NG

IVANOV, VI

KRAMERAGEEV, EA

机构：

来源：

SOVIET ATOMIC ENERGY | 1980年 / 49卷 / 06期

关键词：

D O I：

10.1007/BF01128058

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：833 / 835

页数：3

共 18 条

[11] A COMPUTATIONALLY EFFICIENT UNIFIED APPROACH TO THE NUMERICAL-ANALYSIS OF THE SENSITIVITY AND NOISE OF SEMICONDUCTOR-DEVICES
GHIONE, G
FILICORI, F
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1993, 12 (03) : 425 - 438
[12] APPLICATION OF DOUBLE CANTILEVER BEAM MODEL TO THE ANALYSIS OF CREEP CRACK-GROWTH UNDER NEUTRON-IRRADIATION
MURAKAMI, S
HAYAKAWA, K
MIZUNO, M
EUROPEAN JOURNAL OF MECHANICS A-SOLIDS, 1993, 12 (02) : 249 - 263
[13] INFLUENCE OF GAMMA-IRRADIATION AND NEUTRON-IRRADIATION ON THE PHOTO-LUMINESCENCE SPECTRA OF P-TYPE GASE SINGLE-CRYSTALS
ABDULLAEV, GB
ABASOVA, AZ
ZAITOV, FA
LEPNEV, LS
STAFEEV, VI
CHKUNINA, VN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (06): : 729 - 729
[14] VISCOELASTIC ANALYSIS OF MISMATCH STRESSES IN CERAMIC-MATRIX COMPOSITES UNDER HIGH-TEMPERATURE NEUTRON-IRRADIATION
ELAZAB, A
GHONIEM, NM
MECHANICS OF MATERIALS, 1995, 20 (04) : 291 - 303
[15] Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation
Munteanu, Daniela
Autran, Jean-Luc
ELECTRONICS, 2023, 12 (21)
[16] Exploration of single-event effects under defocused laser irradiation: Analysis of charge collection in bipolar devices
Hou, Hengbo
Yue, Jiansong
Li, Zhankai
Hu, Ning
Wei, Qiang
SOLID-STATE ELECTRONICS, 2025, 223
[17] Analysis of k-Out-of-N-Systems with Different Units under Simultaneous Failures: A Matrix-Analytic Approach
Montoro-Cazorla, Delia
Perez-Ocon, Rafael
MATHEMATICS, 2022, 10 (11)
[18] A novel, rigorous approach to the dynamic, large-signal stability analysis of semiconductor devices and circuits under electro-thermal interaction
Cappelluti, F.
Traversa, F. L.
Bonani, F.
Ghione, G.
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, : 689 - 692

← 1 2 →