ASYMMETRIC GAIN INDUCED BY LONGITUDINAL SPATIAL CARRIER BURNING IN SEMICONDUCTOR-LASERS

被引：1
|
作者：
HUANG, YZ
机构：
[1] Institute of Semiconductors, Chinese Academy of Sciences, Beijing, PO Box 912
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 12期
关键词：
Lasers and laser applications; Semiconductor lasers;
D O I：
10.1049/el:19900511
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nonlinear gain caused by dielectric corrugation resulting from the cavity standing wave of a lasing mode in semiconductor lasers is investigated using the perturbation approach. The results show that the nonlinear gain spectrum is asymmetric when the linewidth enhancement factor a # 0, and the possibility of single mode operation is greater at a = 0. © 1990, The Institution of Electrical Engineers. All rights reserved.
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页码：783 / 784
页数：2
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